Autori: Ostojic Stanko M
| Naslov | Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy (Article) |
| Autori | Abood Imhimmad Sasic Rajko M Ostojic Stanko M Lukic Petar M 
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| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2013), vol. 52 br. 9, str. - |
| Projekat | Ministry of Science and Technological Development, Government of the Republic of Serbia [45003] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance (Article) |
| Autori | Abood Imhimmad Lukic Petar M Sasic Rajko M Alkoash Abed Alkhem Ostojic Stanko M
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| Info | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, (2013), vol. 7 br. 5-6, str. 329-333 |
| Projekat | Ministry of Science and Technological Development, Goverment of the Republic of Serbia [45003] |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | The interpretation of the intensity of components of laser scattering by interaction with matter (Article) |
| Autori | Fidanovski Zoran A Sreckovic Milesa Z Ostojic Stanko M Ilic Jelena T Merkle Milan J
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| Info | PHYSICA SCRIPTA, (2012), vol. T149 br. , str. - |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs (Article) |
| Autori | Alkoash Abedalkhem Sasic Rajko M Ostojic Stanko M Lukic Petar M
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| Info | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, (2011), vol. 8 br. 1, str. 47-50 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
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| Naslov | The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Alkoash Abedalkhem
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| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2010), vol. 12 br. 5, str. 1161-1164 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
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| Naslov | Electronic Principles Of Some Trends In Properties Of Metallic Hydrides (Proceedings Paper) |
| Autori | Ivanovic Nenad B Novakovic Nikola B Colognesi D Radisavljevic Ivana M Ostojic Stanko M
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| Info | INTERNATIONAL JOURNAL OF MODERN PHYSICS B, (2010), vol. 24 br. 6-7, str. 703-710 |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Vacuum Fluctuations in Optical Metamaterials Containing Nonlinear Dielectrics (Proceedings Paper) |
| Autori | Jaksic Zoran S Ostojic Stanko M Tanaskovic Dragan M Matovic Jovan B
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| Info | ACTA PHYSICA POLONICA A, (2009), vol. 116 br. 4, str. 628-630 |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Surface carriers' concentration dynamics caused by a small alternating applied voltage (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Ramovic Rifat M
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| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2008), vol. 10 br. 12, str. 3430-3435 |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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| Naslov | Analytical model of a Si TFT with cylindrical source and drain (Proceedings Paper) |
| Autori | Ramovic Rifat M Lukic Petar M Sasic Rajko M Ostojic Stanko M
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| Info | 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2008), vol. br. , str. 193-196 |
| Ispravka | Web of Science Citati: Web of Science |
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| Naslov | Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ramovic Rifat M Ostojic Stanko M
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| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2007), vol. 9 br. 9 , Suppl. , str. 2703 -2708 |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
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